NTMFS4826NET1G
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NTMFS4826NET1G datasheet
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МаркировкаNTMFS4826NET1G
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ПроизводительON Semiconductor
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ОписаниеON Semiconductor NTMFS4826NET1G Configuration: Single Continuous Drain Current: 15 A Current - Continuous Drain (id) @ 25?° C: 9.5A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fall Time: 5.2 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 62 S Gate Charge (qg) @ Vgs: 20nC @ 4.5V Gate Charge Qg: 13.5 nC Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 1850pF @ 12V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 85 C Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 870mW Power Dissipation: 2.16 W Rds On (max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 4.3 mOhms Rise Time: 39.8 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA
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Количество страниц6 шт.
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